Development of the Lattice Matched GaInP/GaInAs/Ge Triple Junction Solar Cell with an Efficiency Over 40

This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of...

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Published in12th Spanish Conference on Electron Devices, CDE 2018,Salamanca, Spain,2018-11-14 - 2018-11-16 pp. 1 - 4
Main Authors Barrutia, L., Garcia, I., Barrigon, E., Ochoa, M., Lombardero, I., Hinojosa, M., Cano, P., Bautista, J., Cifuentes, L., Rey-Stolle, I., Algora, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Doping
Energisystem
Energy Systems
Engineering and Technology
Environmental Engineering
Epitaxial growth
Epitaxial layers
Ge wafers
III-V semiconductors
Junctions
Lattices
MOVPE
multijunction solar cell
Naturresursteknik
Photovoltaic cells
Substrates
Teknik
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Summary:This paper summarizes the state-of-the-art of the lattice matched GaInP/Ga(In)As/Ge triple-junction solar cell developed at the Solar Energy Institute of UPM (IES-UPM). Different research topics tackled over the last years about this structure are described. As result of this work, an efficiency of ~ 40% at \sim 415\times is presented.
ISBN:1538657791
9781538657799
DOI:10.1109/CDE.2018.8596996