Integrated Schottky Structures for Applications Above 100 GHz

Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the...

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Bibliographic Details
Published in2008 European Microwave Integrated Circuit Conference pp. 202 - 205
Main Authors Alderman, B., Sanghera, H., Thomas, B., Matheson, D., Maestrini, A., Hui Wang, Treuttel, J., Siles, J.V., Davies, S., Narhi, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2008
Subjects
Cryogenics
Fabrication
Foundries
Frequency
Gallium arsenide
Job production systems
Laboratories
Millimeter wave technology
Schottky diodes
Space technology
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Summary:Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory.
ISBN:9782874870071
2874870072
DOI:10.1109/EMICC.2008.4772264