Memristor Behaviors of Highly Oriented Anatase TiO2 Film Sandwiched between Top Pt and Bottom SrRuO3 Electrodes

Bipolar resistive switching behaviors have been observed in Pt/TiO 2 /SrRuO 3 structures whose TiO 2 has a highly oriented anatase phase. The resistive switching behaviors reveal a strong dependence on the duration time of the switching pulse, top electrode size, and amplitude of the switching volta...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 4; no. 4; pp. 041101 - 041101-3
Main Authors Yoon, In-Sung, Choi, Jin Sik, Kim, Yeon Soo, Hong, Sa Hwan, Hwang, In Rok, Park, Yoon Chang, Kang, Sung-Oong, Kim, Jin-Soo, Park, Bae Ho
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.04.2011
Online AccessGet full text

Cover

More Information
Summary:Bipolar resistive switching behaviors have been observed in Pt/TiO 2 /SrRuO 3 structures whose TiO 2 has a highly oriented anatase phase. The resistive switching behaviors reveal a strong dependence on the duration time of the switching pulse, top electrode size, and amplitude of the switching voltage. We have also analyzed the conduction mechanisms of each resistance state in both polarities. All the resistive switching characteristics of our Pt/TiO 2 /SrRuO 3 structures can be explained by memristor behavior based on locally induced ion migration.
Bibliography:(a) XRD $\theta$--$2\theta$ data of TiO 2 /SRO/LAO (red line) and SRO/LAO (black line) structures. (b) Cross-sectional high resolution transmission electron microscopy image of Pt/TiO 2 /SRO whose TiO 2 is 20 nm thick. (a) $I$--$V$ sweep of a Pt/TiO 2 /SRO structure whose TiO 2 has a thickness of 20 nm. The inset shows the stability of each resistance state at RT. (b) RESET switching behaviors of a Pt/TiO 2 /SRO structure depending on duration time of SET switching pulse. Fitting results of HRS and LRS of a Pt/TiO 2 /SRO structure at voltages with (a) negative and (b) positive polarities. The inset of (a) shows a linear relationship between $\ln J$ and the square root voltage of HRS within the voltage range of $-0.16$ to $-1.0$ V. Resistive switching behaviors of Pt/TiO 2 /SRO structures (a) with different top electrode sizes of 50 and 100 μm and (b) using different SET voltages applied on 50 μm top electrodes. The inset of (b) shows the linear relationship between SET and RESET voltages.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.041101