Synthesis of an AlN Polycrystalline Bulk Layer and Nanotubes by Using NH3 and Bi
A bulk layer of aluminum nitride (AlN) polycrystals was synthesized on a boron nitride crucible surface by heating Al chunks with 5 mol% of bismuth at 1273 K for 3 h under NH3 gas flow. The fragments of the layer were characterized by X‐ray diffraction, scanning electron microscopy, and transmission...
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Published in | Journal of the American Ceramic Society Vol. 92; no. 11; pp. 2578 - 2582 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Malden, USA
Blackwell Publishing Inc
01.11.2009
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Online Access | Get full text |
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Summary: | A bulk layer of aluminum nitride (AlN) polycrystals was synthesized on a boron nitride crucible surface by heating Al chunks with 5 mol% of bismuth at 1273 K for 3 h under NH3 gas flow. The fragments of the layer were characterized by X‐ray diffraction, scanning electron microscopy, and transmission electron microscopy. The platelet grains of AlN with a size of 0.1–1.0 μm and having preferred orientation of the c‐axis perpendicular to the layer were formed at the crucible side. Nanotubes 6–15 μm long and about 20–100 nm thick grew on the gas phase side of the layer. |
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Bibliography: | ArticleID:JACE03286 ark:/67375/WNG-C4ZDRVH3-S istex:3CBABDF3513CD40652BB6C95A348298CB26E62DE K. Watari—contributing editor ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/j.1551-2916.2009.03286.x |