Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate

• Published in: Advanced materials (Weinheim) Vol. 28; no. 25; pp. 5019 - 5024
• Main Authors: Cui, Fangfang, Wang, Cong, Li, Xiaobo, Wang, Gang, Liu, Kaiqiang, Yang, Zhou, Feng, Qingliang, Liang, Xing, Zhang, Zhongyue, Liu, Shengzhong, Lei, Zhibin, Liu, Zonghuai, Xu, Hua, Zhang, Jin
• Format: Journal Article
• Language: English
• Published: Germany Blackwell Publishing Ltd 01.07.2016
• Subjects: 2D anisotropic materials; epitaxial growth; high crystal quality; Re-Te binary eutectic; rhenium disulphide (ReS2); high crystal quality; 2D anisotropic materials; rhenium disulphide (ReS2); epitaxial growth; Re-Te binary eutectic
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.201600722

Anisotropic 2D layered material rhenium disulfide (ReS2) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium‐assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium‐tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460–900 °C with high efficiency.