Bevel Edge Termination for Vertical GaN Power Diodes

Edge termination for vertical power devices presents a significant challenge, as improper termination can result in devices with a breakdown voltage significantly less than the ideal infinite-planar case. Edge termination for vertical GaN devices is particularly challenging due to limitations in ion...

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Bibliographic Details
Published in2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) pp. 281 - 285
Main Authors Binder, Andrew T., Dickerson, Jeramy R., Crawford, Mary H., Pickrell, Greg W., Allerman, Andrew A., Sharps, Paul, Kaplar, Robert J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2019
Subjects
Doping
edge termination
Electric breakdown
Electric fields
Gallium nitride
junction termination extension
Junctions
power devices
Semiconductor process modeling
Silicon carbide
vertical GaN diode
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Summary:Edge termination for vertical power devices presents a significant challenge, as improper termination can result in devices with a breakdown voltage significantly less than the ideal infinite-planar case. Edge termination for vertical GaN devices is particularly challenging due to limitations in ion implantation for GaN, and as such this work investigates a bevel edge termination technique that does not require implantation and has proven to be effective for Si and SiC power devices. However, due to key differences between GaN versus Si and SiC p-n junctions (specifically, a grown versus an implanted junction), this technology needs to be reevaluated for GaN. Simulation results suggest that by leveraging the effective bevel angle relationship, a 10-15° physical bevel angle can yield devices with 85-90% of the ideal breakdown voltage. Results are presented for a negative bevel edge termination on an ideally 2 kV vertical GaN p-n diode.
DOI:10.1109/WiPDA46397.2019.8998835