26.7% Efficient 4-Terminal Perovskite-Silicon Tandem Solar Cell Composed of a High-Performance Semitransparent Perovskite Cell and a Doped Poly-Si/SiOx Passivating Contact Silicon Cell

• Published in: IEEE journal of photovoltaics Vol. 10; no. 2; pp. 417 - 422
• Main Authors: Rohatgi, Ajeet, Zhu, Kai, Tong, Jinhui, Kim, Dong Hoe, Reichmanis, Elsa, Rounsaville, Brian, Prakash, Vivek, Ok, Young-Woo
• Format: Journal Article
• Language: English
• Published: Piscataway IEEE 01.03.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Boron; Computer architecture; Current measurement; Efficiency; Emitters; Energy gap; Four terminal (4T) tandem solar cell; Heterojunctions; High temperature; Microprocessors; passivating contact Si solar cells; perovskite; Perovskites; Photonic band gap; Photovoltaic cells; Silicon; Solar cells; SOLAR ENERGY; tunnel oxide passivated contact (TOPCon) cell; Viability
• ISSN: 2156-3381; 2156-3403
• DOI: 10.1109/JPHOTOV.2019.2963564

The rapid rise in single-junction perovskite solar cell (PSC) efficiencies, tunable bandgap, and low-cost solution processability make PSCs an attractive candidate for tandems with Si bottom cells. However, the challenge is to fabricate a high-performance semitransparent perovskite top cell in combination with an appropriate silicon bottom cell with high response to long wavelength photons that are filtered through the perovskite top cell. Currently, semitransparent perovskite cells show much lower performance compared with their opaque counterparts, while high-performance silicon bottom cells, such as heterojunction with intrinsic thin layer and interdigitated back contact, may be too expensive to meet the cost and efficiency targets for commercial viability. Here, we demonstrate a 26.7% perovskite-Si four terminal (4T) tandem cell comprising a highly efficient 17.8% CsFAMAPbIBr semitransparent, 1.63-eV bandgap perovskite top cell, and a ≥22% efficiency n-type Si bottom cell fabricated with a conventional boron diffused emitter on the front and carrier selective n + poly-Si/SiO x passivated contact on the rear. This is among the highest efficiency perovskite/Si 4T tandems published to date and represents the first report of the use of the high temperature-resistant single side n-tunnel oxide passivated contact Si cell in a 4T configuration.