Effects of interface properties in SiC MOSFETs on reliability

Based on the experience with silicon (Si) devices, some characteristics of silicon carbide (SiC) devices are likely to be misunderstood. In this paper, studies on channel mobility, time dependent dielectric breakdown (TDDB), and negative bias temperature instability (NBTI) in 4H-SiC MOSFETs are revi...

Full description

Saved in:
Bibliographic Details
Published in2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits pp. 68 - 71
Main Authors Mori, Y., Hisamoto, D., Tega, N., Matsumura, M., Yoshimoto, H., Shima, A., Shimamoto, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2015
Subjects
Dielectric breakdown
Face
Interface states
Photonic band gap
Silicon
Silicon carbide
Online AccessGet full text

Cover

More Information
Summary:Based on the experience with silicon (Si) devices, some characteristics of silicon carbide (SiC) devices are likely to be misunderstood. In this paper, studies on channel mobility, time dependent dielectric breakdown (TDDB), and negative bias temperature instability (NBTI) in 4H-SiC MOSFETs are reviewed. Through the discussions, it is indicated that SiC-based models, such as local band gap modulation, and models for the relationship between defect energy state and SiC band gap are effective to understand the above characteristics.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2015.7224335