Deep electron states in indium-doped Cd0.93Mn0.07Te DLTS study

Electron traps in indium doped Cd0.93Mn0.07Te were studied with Deep Level Transient Spectroscopy. Five electron traps were found (labeled as E1 ‐ E5). Energy levels ET of related defects are equal to E T 1 = 0.09 eV, E T 2 = 0.12 eV, E T 3 = 0.18 eV, E T 4 = 0.56 eV and E T 5 = 0.65 eV. Three of th...

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Published inPhysica status solidi. C Vol. 3; no. 4; pp. 817 - 820
Main Authors Hajdusianek, A., Szatkowski, J., Płaczek-Popko, E., Sierański, K., Becla, P.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.03.2006
WILEY‐VCH Verlag
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71.55.Gs
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Summary:Electron traps in indium doped Cd0.93Mn0.07Te were studied with Deep Level Transient Spectroscopy. Five electron traps were found (labeled as E1 ‐ E5). Energy levels ET of related defects are equal to E T 1 = 0.09 eV, E T 2 = 0.12 eV, E T 3 = 0.18 eV, E T 4 = 0.56 eV and E T 5 = 0.65 eV. Three of them (E1, E2, E3 ) are related to the defects with thermally activated capture cross section. Electric field enhanced electron emission from the trap E4 was observed and described in the terms of the Poole‐Frenkel ‐ mechanism. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ark:/67375/WNG-C91TFH0T-5
ArticleID:PSSC200564674
istex:85EB7B76E0931CCA549D998F5CEB06B365E754A4
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1862-6351
1610-1634
1610-1642
DOI:10.1002/pssc.200564674