Enhanced plasma charging damage due to AC charging effect

• Published in: 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) pp. 359 - 364
• Main Authors: Jin, Y., Teo, W.Y., Hou, Y.T., Gn, F.H., Lim, H.F., Han, Z.Y., Li, M.F.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2002
• Subjects: Applied sciences; Computer aided manufacturing; Design. Technologies. Operation analysis. Testing; Dielectrics; Electronics; Exact sciences and technology; Filtering; Integrated circuit interconnections; Integrated circuits; Manufacturing processes; Microelectronic fabrication (materials and surfaces technology); Plasma applications; Plasma density; Plasma materials processing; Plasma sources; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Testing, measurement, noise and reliability; Voltage; Waveform; Metallic conduction; Load distribution; Electric charge; High density; Metallizing; Experimental study; Dielectric metal interface; Deposition process; ULSI circuit; Microelectronic fabrication; Experimental result; Interconnection; Failure analysis; Plasma etching; Integrated circuit; Antenna; Alternating current
• ISBN: 0780373529; 9780780373525
• DOI: 10.1109/RELPHY.2002.996660

Plasma charging damage from high density plasma (HDP) inter metal dielectrics (IMD) deposition process was found to be drastically enhanced as metal antenna is placed at higher interconnect layers. Such charging damage enhancement was ascribed to AC charging effect. By coupling with non-uniform plasma potential in HDP tools, the AC charging effect made important contributions to the final charging damages. A modified charge sharing model was used to interpret the dependence of AC charging damages on the location of metal antenna on interconnected layers.