Optically active substoichiometric Si3N4 μ-cavities
We report on the morphological and emission properties of microdisk resonators with an optically active disk material made of luminescent substoichiometric Si3N4 matrix. We demonstrate the importance of optimising the material by finding a compromise between the photoluminesce properties and optical...
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Published in | Physica status solidi. C Vol. 8; no. 3; pp. 1060 - 1065 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Berlin
WILEY-VCH Verlag
01.03.2011
WILEY‐VCH Verlag Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | We report on the morphological and emission properties of microdisk resonators with an optically active disk material made of luminescent substoichiometric Si3N4 matrix. We demonstrate the importance of optimising the material by finding a compromise between the photoluminesce properties and optical losses. A careful design of the cavities for optimising the radiative quality factors has been also performed, enabling us to produce active disks with low intrinsic losses. Subnanometer whispering gallery mode (WGM) resonances have been experimentally detected, showing quality factors as high as 1200 around the wavelength of 719 nm. These values are among the highest previously reported values in Si‐nanocluster‐based systems and are actually limited by the spectral resolution of our experimental setup. In addition, an increasing of the pumping flux is not generating a spectral widening of the resonances, thus not affecting the quality of the cavities. This is in contrast to what observed in other reports of Si‐nc based microcavities, where significant enlargements are observed associated to carrier absorption losses. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Bibliography: | ark:/67375/WNG-KCF28FLR-N GICSERV - No. NGG-172 LASSI - No. TEC 2008-08359 istex:3302367357E8808E84E25E499F613698026FE2C9 ArticleID:PSSC201000399 Spanish Projects SENA - No. TSI-020301-2008-11 |
ISSN: | 1862-6351 1610-1642 |
DOI: | 10.1002/pssc.201000399 |