Temperature dependent spectroscopic ellipsometry of Ag2Se and Ag2S with phase transitions from ionic to superionic conductivity state

• Published in: Physica status solidi. C Vol. 12; no. 6; pp. 605 - 609
• Main Authors: Alekperov, O., Gasimov, N., Khalilova, Kh, Shim, Y., Paucar, R., Abdulzade, N., Samedov, O., Jahangirli, Z., Nakhmedov, E., Wakita, K., Mamedov, N.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.06.2015; WILEY‐VCH Verlag; Wiley Subscription Services, Inc
• Subjects: free carriers plasma; ionic conductivity; phase transitions; spectroscopic ellipsometry; superionic conductivity
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.201400367

Temperature dependent infrared (IR) and optical spectroscopic ellipsometry methods are used to investigate peculiarities of the transitions from the ionic conductivity to the superionic conductivity states in Ag2S and Ag2Se compounds. The structural phase transitions (SPTs), known as β→α transition in these semiconductors, are investigated also with spectroscopic ellipsometry methods. The electronic band structure of Ag2S at the SPT changes sharply from the monoclinic to the bcc phase, which occurs at T = 453 K in the super ionic conductivity state, where all the interband transitions in optic region, corresponding to the monoclinic structure of β‐phase, disappear. The α‐phase of Ag2S is characterised with new lines in the dielectric functions ε1 and ε2, which arise at 5‐6.5 eV. The interband transitions do not change in the SPT from the orthorhombic to the bcc in Ag2Se, which occurs at T > 406 K. In IR ellipsometry for the degenerated Ag2Se, the free carriers' plasma energy is displaced abruptly from ħω=0.075 eV at T=300 K to ħω=0.125 eV at T=338 K. The same effect is seen in the IR ellipsometry for Ag2S, where negative ε1 appears at T=434‐440 K. These facts indicate a drastic increase of the free carriers concentrations in both of the semiconductors at temperatures before the β→α SPT. In Ag2S the second abrupt shift of the free carriers plasma energy from 0.035eV to 0.1 eV occurs at T=453 K, corresponding to β→ α SPT. The second shift is due to the electronic band structure change of Ag2S. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)