Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions
A novel simple method to produce a high‐quality interface between semiconductor (e.g., Ge or III‐V) and dielectric film (i.e., SiO2) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T ≥ 300 °C, leading to semiconductor reduction and dielectric film growth. As a res...
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Published in | Advanced materials interfaces Vol. 3; no. 11 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
Blackwell Publishing Ltd
06.06.2016
John Wiley & Sons, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | A novel simple method to produce a high‐quality interface between semiconductor (e.g., Ge or III‐V) and dielectric film (i.e., SiO2) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T ≥ 300 °C, leading to semiconductor reduction and dielectric film growth. As a result, the formed interface is atomically abrupt and has a low density of defect gap states. |
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Bibliography: | ark:/67375/WNG-ZF5W0N9C-W istex:BF4658D7ACC75505A7783E4CF4FF9CAD07926111 ArticleID:ADMI201500510 |
ISSN: | 2196-7350 2196-7350 |
DOI: | 10.1002/admi.201500510 |