Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions

A novel simple method to produce a high‐quality interface between semiconductor (e.g., Ge or III‐V) and dielectric film (i.e., SiO2) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T ≥ 300 °C, leading to semiconductor reduction and dielectric film growth. As a res...

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Published inAdvanced materials interfaces Vol. 3; no. 11
Main Authors Kuzmin, Mikhail, Laukkanen, Pekka, Mäkelä, Jaakko, Yasir, Muhammad, Tuominen, Marjukka, Dahl, Johnny, Punkkinen, Marko P. J., Kokko, Kalevi, Hedman, Hannu-Pekka, Moon, Jongyun, Punkkinen, Risto, Lastusaari, Mika, Polojärvi, Ville, Korpijärvi, Ville-Markus, Guina, Mircea
Format Journal Article
LanguageEnglish
Published Weinheim Blackwell Publishing Ltd 06.06.2016
John Wiley & Sons, Inc
Subjects
interface reactions
oxide films
semiconductors
spectroscopic methods
transistors
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Summary:A novel simple method to produce a high‐quality interface between semiconductor (e.g., Ge or III‐V) and dielectric film (i.e., SiO2) is suggested. A nonoxygen element is deposited directly on an oxidized substrate at T ≥ 300 °C, leading to semiconductor reduction and dielectric film growth. As a result, the formed interface is atomically abrupt and has a low density of defect gap states.
Bibliography:ark:/67375/WNG-ZF5W0N9C-W
istex:BF4658D7ACC75505A7783E4CF4FF9CAD07926111
ArticleID:ADMI201500510
ISSN:2196-7350
2196-7350
DOI:10.1002/admi.201500510