Time-of-flight SIMS depth profiling of Na in SiO2 glass using C60 sputter ion beam

• Published in: Surface and interface analysis Vol. 45; no. 1; pp. 113 - 116
• Main Authors: Kobayashi, Daisuke, Yamamoto, Yuichi, Isemura, Tsuguhide
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Chichester Blackwell Publishing Ltd 01.01.2013; Wiley; Wiley Subscription Services, Inc
• Subjects: Atomic, molecular, and ion beam impact and interactions with surfaces; C60 sputter ion beam; Condensed matter: electronic structure, electrical, magnetic, and optical properties; depth profiling; Electron and ion emission by liquids and solids; impact phenomena; Exact sciences and technology; Impact phenomena (including electron spectra and sputtering); Na implantation; Na migration; Physics; SiO2 glass; ToF-SIMS; Ion implantation; Inorganic compounds; C; Glass; Time-of-flight method; Na migration; Sputtering; Operating conditions; Ion beams; sputter ion beam; ToF-SIMS; Silicon oxides; Fullerenes; SiO; depth profiling; SIMS; Na implantation; Diffusion; Depth profiles
• ISSN: 0142-2421; 1096-9918
• DOI: 10.1002/sia.5056

A depth profile analysis of SiO2 glass ion implanted with 23Na+ was carried out on a time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) with OX, Cs and buckminsterfullerene (C60) ion sputtering. The Na migration in SiO2 glass during both analysis process and sputter process was investigated under the various operating conditions. During the analysis process, 23Na+ intensity stayed constant on the dose density of the Bi primary ion regardless of the conditions and went up using higher primary ion current. The Na profile in SiO2 glass similar to that of the Lindard–Scharff–Schiott theory was successfully acquired by the use of C60 ion sputtering regardless of the operating conditions. It is considered that Na does not migrate during the sputter process with C60 sputter ion beam. In addition, the detection limit of Na depth profile with C60 ion sputtering was almost the same with existing dynamic SIMS analysis with Cs primary ion. Thus, the ToF‐SIMS with C60 ion sputtering is shown to be more versatile than the existing method by avoiding the necessity to optimize the operating conditions. Copyright © 2012 John Wiley & Sons, Ltd.