Impact of Thickness Control of Hf0.5Zr0.5O2 Films for the Metal-Ferroelectric-Insulator-Semiconductor Capacitors

• Published in: IEEE electron device letters Vol. 40; no. 7; pp. 1032 - 1035
• Main Authors: Min, Dae-Hong, Kang, Seung Youl, Moon, Seung-Eon, Yoon, Sung-Min
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Capacitance-voltage characteristics; Capacitors; Electrodes; Ferroelectric materials; ferroelectric memory; Ferroelectricity; Film thickness; Hf₀.₅Zr₀.₅O; MFIS; Silicon; Thin films; X-ray scattering
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2019.2917032

Effects of controlling the film thickness of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) thin film were investigated to figure out the important design strategies for the metal-ferroelectric-insulator-semiconductor (MFIS) capacitors. Even though the maximum remnant polarization (2P r ) was obtained to be <inline-formula> <tex-math notation="LaTeX">23.4~\mu \text{C} </tex-math></inline-formula>/cm 2 for the HZO capacitors with an HZO thickness of 20 nm, the ferroelectric memory window increased from 0.44 to 0.82 V with increasing the HZO thickness from 20 to 40 nm. The crystalline phases of the HZO thin films showed thickness-dependent variations with the relative dielectric permittivity.