Tunable Spectral Properties of Photodetectors Based on Quaternary Transition Metal Dichalcogenide Alloys MoxW(1-x)Se2yS2(1-y)

• Published in: IEEE sensors journal Vol. 21; no. 1; pp. 325 - 330
• Main Authors: Avdizhiyan, A. Y., Lavrov, S. D., Abdullaev, D. A., Shestakova, A. P., Kulyuk, L. L., Mishina, E. D.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2021; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Absorption; Alloy development; Chalcogenides; Composition; Energy gap; Graphene; Luminescence; Metals; Monolayers; Nanoelectronics; nanomaterials; nanophotonics; Nanotechnology devices; Optical imaging; Optical sensors; Optoelectronic devices; photodetectors; Photometers; Photonic band gap; photovoltaic effects; Selectivity; Semiconductors; Sensors; Spectra; Stability; Transition metal alloys; Transition metal compounds; Two dimensional models
• ISSN: 1530-437X; 1558-1748
• DOI: 10.1109/JSEN.2020.3012876

The ability to control the bandgap in two-dimensional graphene-like semiconductors is an essential task for the development of optoelectronic and nanoelectronic devices. Complex compositions alloys of transition metal dichalcogenides, such as Mo x W 1-x Se 2y S 2(1-y) , are the most optimal candidates for this purpose. Here we present spectrally selective photodetectors based on such quaternary transition metal dichalcogenides monolayers. It is shown that the spectral selectivity of optical detectors can be changed in a wide range if the composition of these quaternary monolayer transition metal dichalcogenides varies. This effect is directly related to the significant influence of the composition of such two-dimensional semiconductors on their bandgap. A theoretical model for estimation of quaternary transition metal dichalcogenides optical coefficients and optical detectors on their basis is proposed. The optical absorption simulation in created detectors was made, the results of which qualitatively coincided with the detectors performance. Thus, the obtained results can contribute to the development of valleytronics for two-dimensional semiconductor structures.