Al2O3 Passivation Layer for InGaN/GaN LED Deposited by Ultrasonic Spray Pyrolysis

• Published in: IEEE photonics technology letters Vol. 26; no. 12; pp. 1243 - 1246
• Main Authors: Liu, Han-Yin, Hsu, Wei-Chou, Chou, Bo-Yi, Wang, Yi-Hsuan, Sun, Wen-Ching, Wei, Sung-Yen, Yu, Sheng-Min
• Format: Journal Article
• Language: English
• Published: New York IEEE 15.06.2014; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aluminum oxide; Diodes; Gallium nitride; LED lamps; Passivation; Refractive index; Resistance; Spectrum analysis; anti-reflction; passivation; InGaN/GaN; Ultrasonic spray pyrolysis; light-emitting diode; Al2O3
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2014.2319309

This letter utilizes ultrasonic spray pyrolysis (USP) to deposit Al 2 O 3 as the passivation layer of GaN light-emitting diodes (LEDs). The composition of Al 2 O 3 is analyzed by X-ray photoelectron spectroscopy. The refractive index and transmittance of USP-grown Al 2 O 3 are investigated. The thickness of Al 2 O 3 is determined to be 70 nm, which is close to the optimum from antireflection theorem calculation for the wavelength of 455 nm. The coverage quality and thickness are confirmed by transmission electron microscopy. The light output power (LOP) of USP-grown-Al 2 O 3 -passivated InGaN/GaN LED is improved from 321 mW to 347 mW compared with an LED without passivation. The forward voltage (V F ) and series resistance (R s ) are not subject to significant variations but the shunt resistance (R SH ) is increased after Al 2 O 3 passivation. LED chips with Al 2 O 3 and SiO 2 passivation are packaged as LED lamps. Devices passivated by USP-grown Al 2 O 3 show slightly better LOP performance than those passivated by plasma-enhanced chemical vapor deposition-grown SiO 2 .