Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

• Published in: Small (Weinheim an der Bergstrasse, Germany) Vol. 8; no. 1; pp. 63 - 67
• Main Authors: Li, Hai, Yin, Zongyou, He, Qiyuan, Li, Hong, Huang, Xiao, Lu, Gang, Fam, Derrick Wen Hui, Tok, Alfred Iing Yoong, Zhang, Qing, Zhang, Hua
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 09.01.2012; WILEY‐VCH Verlag
• Subjects: 2D nanomaterials; Equipment Design; field-effect transistors; gas sensors; Gases - analysis; Gases - chemistry; mechanical exfoliation; MoS2; Nanostructures - chemistry; Nanotechnology - methods; Nitrous Oxide - analysis; Nitrous Oxide - chemistry; Temperature; Transistors, Electronic

Single‐ and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field‐effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single‐layer MoS2 device s...