Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature

Single‐ and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field‐effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single‐layer MoS2 device s...

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Bibliographic Details
Published inSmall (Weinheim an der Bergstrasse, Germany) Vol. 8; no. 1; pp. 63 - 67
Main Authors Li, Hai, Yin, Zongyou, He, Qiyuan, Li, Hong, Huang, Xiao, Lu, Gang, Fam, Derrick Wen Hui, Tok, Alfred Iing Yoong, Zhang, Qing, Zhang, Hua
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 09.01.2012
WILEY‐VCH Verlag
Subjects
2D nanomaterials
Equipment Design
field-effect transistors
gas sensors
Gases - analysis
Gases - chemistry
mechanical exfoliation
MoS2
Nanostructures - chemistry
Nanotechnology - methods
Nitrous Oxide - analysis
Nitrous Oxide - chemistry
Temperature
Transistors, Electronic
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Summary:Single‐ and multilayer MoS2 films are deposited onto Si/SiO2 using the mechanical exfoliation technique. The films were then used for the fabrication of field‐effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single‐layer MoS2 device shows a rapid response after exposure to NO, the current was found to be unstable. The two‐, three‐, and four‐layer MoS2 devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.
Bibliography:ark:/67375/WNG-MRXL94JC-0
ArticleID:SMLL201101016
istex:43DCB0413A6BF5F7A4636137379CE8D67112B867
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1613-6810
1613-6829
1613-6829
DOI:10.1002/smll.201101016