APA (7th ed.) Citation

Li, H., Yin, Z., He, Q., Li, H., Huang, X., Lu, G., . . . Zhang, H. (2012). Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature. Small (Weinheim an der Bergstrasse, Germany), 8(1), 63-67. https://doi.org/10.1002/smll.201101016

Chicago Style (17th ed.) Citation

Li, Hai, et al. "Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature." Small (Weinheim an Der Bergstrasse, Germany) 8, no. 1 (2012): 63-67. https://doi.org/10.1002/smll.201101016.

MLA (9th ed.) Citation

Li, Hai, et al. "Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature." Small (Weinheim an Der Bergstrasse, Germany), vol. 8, no. 1, 2012, pp. 63-67, https://doi.org/10.1002/smll.201101016.