Investigating the effect of O2 plasma treatment on the operational characteristics of Schottky-gate AlGaN/GaN HEMT

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Bibliographic Details
Published inSemiconductor science and technology Vol. 39; no. 8
Main Authors Liu, An-Chen, Huang, Yu-Wen, Chen, Hsin-Chu, Dong, Yi-Jun, Tu, Po-Tsung, Hsu, Lung-Hsing, Lai, Yung-Yu, Yeh, Po-Chun, Huang, I-Yu, Kuo, Hao-Chung
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.08.2024
Subjects
high electron mobility transistor
leakage current improvement
plasma
surface treatment
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Bibliography:SST-109937.R1
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ad54e6