GaN, AlGaN, HfO2 based radial heterostructure nanowires

Gallium nitride based core/shell nanowire heterostructures are promising components for UV optoelectronic nanodevices. A better understanding of their growth mechanisms is required to tailor the growth and the properties of these structures. We report an investigation of GaN-based radial nanowire he...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 209; no. 1; p. 012011
Main Authors Lari, L, Walther, T, Black, K, Murray, R T, Bullough, T J, Chalker, P R, Chèze, C, Geelhaar, L, Riechert, H
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2010
Subjects
Aluminum gallium nitrides
Atomic layer epitaxy
Epitaxial growth
Gallium nitrides
Hafnium oxide
Heterostructures
Molecular beam epitaxy
Nanotechnology devices
Nanowires
Optoelectronics
Physics
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Summary:Gallium nitride based core/shell nanowire heterostructures are promising components for UV optoelectronic nanodevices. A better understanding of their growth mechanisms is required to tailor the growth and the properties of these structures. We report an investigation of GaN-based radial nanowire heterostructures grown by Molecular Beam Epitaxy combined with Atomic Layer Deposition of HfO2 dielectric cladding. The structural quality of GaN nanowire samples coated with different materials, the elemental distribution along the nanowires' length, as well as the elemental incorporation mechanism are discussed.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/209/1/012011