Structural and electrical characterization of AgInSe2 crystals grown by hot-press method

Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650°C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 100; no. 4; p. 042042
Main Authors Yoshino, K, Kinoshita, A, Shirahata, Y, Oshima, M, Nomoto, K, Yoshitake, T, Ozaki, S, Ikari, T
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2008
Subjects
Carrier density
Crystal defects
Crystal growth
Crystal structure
Diameters
Electrical properties
Electrical resistivity
Grain size
Hall effect
Interstitials
Low temperature
Physics
Structural analysis
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Summary:Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650°C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/100/4/042042