Characteristics of hetero-structured thermoelectric devices with a-Si/Mg2Si-stacked thin film layers
New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg2Si hetero-structure...
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Published in | Electronics letters Vol. 54; no. 24; pp. 1399 - 1401 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
The Institution of Engineering and Technology
29.11.2018
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Subjects | |
Online Access | Get full text |
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Summary: | New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg2Si hetero-structure layers were found to be much superior to those of the a-Si layer. |
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ISSN: | 0013-5194 1350-911X 1350-911X |
DOI: | 10.1049/el.2018.6352 |