Characteristics of hetero-structured thermoelectric devices with a-Si/Mg2Si-stacked thin film layers

• Published in: Electronics letters Vol. 54; no. 24; pp. 1399 - 1401
• Main Authors: Lee, J.H, Ha, J, Piyapatarakul, T, Yoon, C, Jeon, B, Yoon, G
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 29.11.2018
• Subjects: amorphous semiconductors; amorphous silicon‐magnesium silicide‐stacked heterostructure thin film layers; elemental semiconductors; heterostructured thermoelectric devices; magnesium compounds; radiofrequency sputtering; rapid thermal annealing; semiconductor growth; semiconductor heterojunctions; Semiconductor technology; semiconductor thin films; silicon; Si‐Mg2Si; sputter deposition; thermoelectric devices; thermoelectricity; rapid thermal annealing; sputter deposition; elemental semiconductors; semiconductor thin films; Si-Mg2Si; semiconductor growth; silicon; thermoelectric devices; thermoelectricity; amorphous semiconductors; radiofrequency sputtering; magnesium compounds; semiconductor heterojunctions; amorphous silicon-magnesium silicide-stacked heterostructure thin film layers; heterostructured thermoelectric devices
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2018.6352

New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg2Si hetero-structure layers were found to be much superior to those of the a-Si layer.