Dielectric relaxation in glassy Se90Cd6In4

• Published in: Electronics letters Vol. 52; no. 18; pp. 1548 - 1550
• Main Authors: Shukla, N, Mehta, N, Dwivedi, D.K
• Format: Journal Article
• Language: English
• Published: The Institution of Engineering and Technology 02.09.2016
• Subjects: barrier height; cadmium alloys; chalcogenide glasses; charge carriers; charge defect states; dielectric constant; dielectric loss factor; dielectric losses; dielectric relaxation; Elliott theory; glassy alloy; indium alloys; materials preparation; melt quench technique; melting; permittivity; Photonics; Se90Cd6In4; selenium alloys; temperature 308 K to 333 K; temperature dependence; charge defect states; permittivity; selenium alloys; dielectric loss factor; indium alloys; temperature 308 K to 333 K; dielectric relaxation; materials preparation; Elliott theory; chalcogenide glasses; cadmium alloys; melting; glassy alloy; melt quench technique; dielectric constant; Se90Cd6In4; barrier height; charge carriers; temperature dependence; dielectric losses
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2016.1798

In the present Letter frequency (5 × 102 Hz–1 × 105 Hz) and temperature (308–333 K) dependence of dielectric parameter of Se90Cd6In4 glassy alloy has been examined. Conventional melt quench technique has been applied to prepare Se90Cd6In4 glassy alloy. It is observed that dielectric constant (ε′) and dielectric loss factor (ε″) change with frequency and temperature. The dielectric loss data has been utilised to determine the barrier height Wm, which is in accordance with the Elliott's theory of hoping of charge carriers over potential barrier between charge defect states in case of chalcogenide glasses.