Thickness dependence of Weibull slopes of HfO2 gate dielectrics
Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., /spl beta//spl ap/4 for EOT=2.5 nm) is smaller than that of SiO...
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Published in | IEEE electron device letters Vol. 24; no. 1; pp. 40 - 42 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.01.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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