Thickness dependence of Weibull slopes of HfO2 gate dielectrics

• Published in: IEEE electron device letters Vol. 24; no. 1; pp. 40 - 42
• Main Authors: Young Hee Kim, Onishi, K., Chang Seok Kang, Hag-Ju Cho, Rino Choi, Krishnan, S., Akbar, M.S., Lee, J.C.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Breakdown voltage; Dielectric breakdown; Electric breakdown; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Lifting equipment; MOS capacitors; Stress
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2002.807314

Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., /spl beta//spl ap/4 for EOT=2.5 nm) is smaller than that of SiO/sub 2/ with similar physical thickness, whereas /spl beta/ of the thinner HfO/sub 2/ (e.g., /spl beta//spl ap/2 for EOT=1.4 nm) is similar to that of SiO/sub 2/. The implication of the thickness dependence of /spl beta/ is discussed.