Thickness dependence of Weibull slopes of HfO2 gate dielectrics
Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., /spl beta//spl ap/4 for EOT=2.5 nm) is smaller than that of SiO...
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| Published in | IEEE electron device letters Vol. 24; no. 1; pp. 40 - 42 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
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New York
IEEE
01.01.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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| Abstract | Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., /spl beta//spl ap/4 for EOT=2.5 nm) is smaller than that of SiO/sub 2/ with similar physical thickness, whereas /spl beta/ of the thinner HfO/sub 2/ (e.g., /spl beta//spl ap/2 for EOT=1.4 nm) is similar to that of SiO/sub 2/. The implication of the thickness dependence of /spl beta/ is discussed. |
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| AbstractList | Breakdown voltage distribution, Weibull slopes, and area scaling factors were investigated for HfO2 gate dielectrics in order to gain a better understanding of the breakdown mechanism. A Weibull slope of thick HfO2 (e.g., beta about 4 for EOT = 2.5 nm) is smaller than that of SiO2 with similar physical thickness, whereas beta of the thinner HfO2 (e.g., beta abut 2 for EOT = 1.4 nm) is similar to that of SiO2. The implication of the thickness dependence of beta is discussed. Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better understanding of the breakdown mechanism. Weibull slope of thick HfO/sub 2/ (e.g., /spl beta//spl ap/4 for EOT=2.5 nm) is smaller than that of SiO/sub 2/ with similar physical thickness, whereas /spl beta/ of the thinner HfO/sub 2/ (e.g., /spl beta//spl ap/2 for EOT=1.4 nm) is similar to that of SiO/sub 2/. The implication of the thickness dependence of /spl beta/ is discussed. Breakdown voltage distribution, Weibull slopes, and area scaling factors were investigated for HfO2 gate dielectrics in order to gain a better understanding of the breakdown mechanism. A Weibull slope of thick HfO2 (e.g., beta about 4 for EOT = 2.5 nm) is smaller than that of SiO2 with similar physical thickness, whereas beta of the thinner HfO2 (e.g., beta abut 2 for EOT = 1.4 nm) is similar to that of SiO2. The implication of the thickness dependence of beta is discussed. (Author) |
| Author | Young Hee Kim Krishnan, S. Akbar, M.S. Rino Choi Lee, J.C. Hag-Ju Cho Onishi, K. Chang Seok Kang |
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| Snippet | Breakdown voltage distribution, Weibull slopes, and area scaling factors have been investigated for HfO/sub 2/ gate dielectrics in order to gain a better... Breakdown voltage distribution, Weibull slopes, and area scaling factors were investigated for HfO2 gate dielectrics in order to gain a better understanding of... |
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| StartPage | 40 |
| SubjectTerms | Breakdown voltage Dielectric breakdown Electric breakdown Hafnium oxide High K dielectric materials High-K gate dielectrics Leakage current Lifting equipment MOS capacitors Stress |
| Title | Thickness dependence of Weibull slopes of HfO2 gate dielectrics |
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