Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes
In this work,W/β-Ga2O3 Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideali...
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Published in | Journal of semiconductors Vol. 44; no. 7; pp. 23 - 27 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Chinese Institute of Electronics
01.07.2023
Department of Semiconductor Systems Engineering,Sejong University,Seoul 05006,Republic of Korea Department of Intelligent Mechatronics Engineering,Sejong University,Seoul 05006,Republic of Korea%Laboratory of Semiconducting and Metallic Materials(LMSM),University of Biskra,Biskra 07000,Algeria%Research and Development,Powercubesemi Inc.,Sujeong-gu,Seongnam-si,Gyeonggi-do 13449,Republic of Korea%Department of Intelligent Mechatronics Engineering,Sejong University,Seoul 05006,Republic of Korea |
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Online Access | Get full text |
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Summary: | In this work,W/β-Ga2O3 Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K.This apparent high value was related to the tunneling effect.Secondly,the series and on-resistances decreased with increasing operation temperature.Finally,the interfacial dislocation was extracted from the tunneling current.A high dislocation density was found,which indicates the domination of tunneling through dislocation in the transport mecha-nism.These findings are evidently helpful in designing better performance devices. |
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ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/44/7/072801 |