Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

• Published in: Journal of semiconductors Vol. 44; no. 7; pp. 23 - 27
• Main Authors: Labed, Madani, Min, Ji Young, Slim, Amina Ben, Sengouga, Nouredine, Prasad, Chowdam Venkata, Kyoung, Sinsu, Rim, You Seung
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.07.2023; Department of Semiconductor Systems Engineering,Sejong University,Seoul 05006,Republic of Korea; Department of Intelligent Mechatronics Engineering,Sejong University,Seoul 05006,Republic of Korea%Laboratory of Semiconducting and Metallic Materials(LMSM),University of Biskra,Biskra 07000,Algeria%Research and Development,Powercubesemi Inc.,Sujeong-gu,Seongnam-si,Gyeonggi-do 13449,Republic of Korea%Department of Intelligent Mechatronics Engineering,Sejong University,Seoul 05006,Republic of Korea
• Subjects: Ga; low temperature; SBD; SBD paramatters; tungsten; tunneling via dislocation; SBD paramatters; tunneling via dislocation; tungsten; SBD; low temperature; β-Ga2O3
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/44/7/072801

In this work,W/β-Ga2O3 Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K.This apparent high value was related to the tunneling effect.Secondly,the series and on-resistances decreased with increasing operation temperature.Finally,the interfacial dislocation was extracted from the tunneling current.A high dislocation density was found,which indicates the domination of tunneling through dislocation in the transport mecha-nism.These findings are evidently helpful in designing better performance devices.