Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD

• Published in: Journal of semiconductors Vol. 44; no. 6; pp. 39 - 45
• Main Authors: Tang, Wenbo, Han, Xueli, Zhang, Xiaodong, Li, Botong, Ma, Yongjian, Zhang, Li, Chen, Tiwei, Zhou, Xin, Bian, Chunxu, Hu, Yu, Chen, Duanyang, Qi, Hongji, Zeng, Zhongming, Zhang, Baoshun
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.06.2023; School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China; Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China%Research Center of Laser Crystal,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China; Hangzhou Institute of Optics and Fine Mechanics,Hangzhou 311421,China%Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China%Research Center of Laser Crystal,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China
• Subjects: high activation efficiency; homoepitaxial growth; MOCVD; Ohmic contacts; Si-doping films; Si-doping films; high activation efficiency; homoepitaxial growth; Ohmic contacts; MOCVD
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/44/6/062801

Homoepitaxial growth of Si-doped β-Ga2O3 films on semi-insulating(100)β-Ga2O3 substrates by metalorganic chemi-cal vapor deposition(MOCVD)is studied in this work.By appropriately optimizing the growth conditions,an increasing diffu-sion length of Ga adatoms is realized,suppressing 3D island growth patterns prevalent in(100)β-Ga2O3 films and optimizing the surface morphology with[010]oriented stripe features.The slightly Si-doped β-Ga2O3 film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm.Rocking curves of the(400)diffraction peak also demonstrate the high crystal quality of the Si-doped films.According to the capacitance–voltage characteristics,the effective net doping concen-trations of the films are 5.41×1015 – 1.74×1020 cm?3.Hall measurements demonstrate a high electron mobility value of 51 cm2/(V·s),corresponding to a carrier concentration of 7.19×1018 cm?3 and a high activation efficiency of up to 61.5％.Transmis-sion line model(TLM)measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29×10-4 Ω·cm2 for the Si-doped film,which is comparable to the Si-implanted film with a concentration of 5.0×1019 cm?3,confirming the effec-tive Si doing in the MOCVD epitaxy.