Spatial separation of electrons and holes for enhancing the gas-sensing property of a semiconductor: ZnO/ZnSnO3 nanorod arrays prepared by a hetero-epitaxial growth

• Published in: Nanotechnology Vol. 29; no. 17; p. 175501
• Main Authors: Wang, Ying, Gao, Peng, Sha, Linna, Chi, Qianqian, Yang, Lei, Zhang, Jianjiao, Chen, Yujin, Zhang, Milin
• Format: Journal Article
• Language: English
• Published: IOP Publishing 27.04.2018
• Subjects: energy band structure; gas sensor; hetero-epitaxial growth; nanorod arrays; ZnO/ZnSnO
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/aaa6ba

The construction of semiconductor composites is known as a powerful method used to realize the spatial separation of electrons and the holes in them, which can result in more electrons or holes and increase the dispersion of oxygen ions ( O 2 − and O−) (one of the most critical factors for their gas-sensing properties) on the surface of the semiconductor gas sensor. In this work, using 1D ZnO/ZnSnO3 nanoarrays as an example, which are prepared through a hetero-epitaxial growing process to construct a chemically bonded interface, the above strategy to attain a better semiconductor gas-sensing property has been realized. Compared with single ZnSnO3 nanotubes and no-matching ZnO/ZnSnO3 nanoarrays gas sensors, it has been proven by x-ray photoelectron spectroscopy and photoluminescence spectrum examination that the as-obtained ZnO/ZnSnO3 sensor showed a greatly increased quantity of active surface electrons with exceptional responses to trace target gases and much lower optimum working temperatures (less than about 170 °C). For example, the as-obtained ZnO/ZnSnO3 sensor exhibited an obvious response and short response/recovery time (less than 10 s) towards trace H2S gas (a detection limit down to 700 ppb). The high responses and dynamic repeatability observed in these sensors reveal that the strategy based on the as-presented electron and hole separation is reliable for improving the gas-sensing properties of semiconductors.