Preparation of non-oxidized Ge quantum dot lattices in amorphous Al2O3, Si3N4 and SiC matrices

• Published in: Nanotechnology Vol. 30; no. 33; p. 335601
• Main Authors: Neki, Nikolina, Šari, Iva, Salamon, Krešimir, Basioli, Lovro, Sancho-Parramon, Jordi, Grenzer, Jörg, Hübner, René, Bernstorff, Sigrid, Petravi, Mladen, Mi eti, Maja
• Format: Journal Article
• Language: English
• Published: IOP Publishing 16.08.2019
• Subjects: Ge oxidation; Ge QD lattices; influence of matrix; self-assembled growth
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/ab1d3c

The preparation of non-oxidized Ge quantum dot (QD) lattices embedded in Al2O3, Si3N4, SiC matrices by self-assembled growth was studied. The materials were produced by magnetron sputtering deposition, using different substrate temperatures. The deposition regimes leading to the self-assembled growth type and the formation of three-dimensionally ordered Ge QD lattices in different matrices were investigated and determined. The oxidation of the Ge QDs in different matrices was monitored and the best conditions for the production of non-oxidized Ge QDs were found. The optical properties of the Ge QD lattices in different matrices show a strong dependence on the Ge oxidation and the matrix type.