Raman Spectroscopic Study of Gallium-Doped Ba(Zn1/3Ta2/3)O3

• Published in: Journal of the American Ceramic Society Vol. 85; no. 7; pp. 1753 - 1756
• Main Authors: Webb, Stephen J., Breeze, Jonathan, Scott, Robert I., Cannell, David S., Iddles, David M., Alford, Neil McN
• Format: Journal Article
• Language: English
• Published: Westerville, Ohio American Ceramics Society 01.07.2002; Blackwell
• Subjects: barium; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; gallium/gallium compounds; Infrared and raman spectra and scattering; Lattice dynamics; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other nonmetallic inorganics; Phonon states and bands, normal modes, and phonon dispersion; Phonons and vibrations in crystal lattices; Physics; Raman spectroscopy; Scanning electron microscopy; Raman spectra; Inorganic compounds; Transition element compounds; Dielectric resonators; Tantalum oxides; XRD; Experimental study; Zinc oxides; Barium oxides; Sintering; Vibrational modes; Quaternary compounds; Tantalates
• ISSN: 0002-7820; 1551-2916
• DOI: 10.1111/j.1151-2916.2002.tb00348.x

Resonators of Ba(Zn1/3Ta2/3)O3, sintered between 1450° and 1600°C, are characterized by Raman spectroscopy, X‐ray diffraction, and scanning electron microscopy. The quality factors of the resonators are found to depend on sintering temperature, and at 1600°C there is evidence of Zn loss from the surface. The frequency of the A1g Raman mode changes from 800.9 cm−1 for a sample with Q= 80000 (2 GHz), to 794.5 cm−1 when Q= 44000 (2 GHz). Changes in the position of this and other Raman modes are thought to be due to distortions of the oxygen octahedra, brought about by Zn loss. The presence of a BaTa2O6 phase at the surface is confirmed by XRD and SEM.