Electrical and optical properties of GaN/Al2O3 interfaces

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Bibliographic Details
Published inJournal of physics. Condensed matter Vol. 14; no. 48; pp. 13337 - 13344
Main Authors Look, D C, Jones, R L, Sun, X L, Brillson, L J, III, J W Ager, Park, S S, Han, J H, Molnar, R J, Maslar, J E
Format Journal Article Conference Proceeding
LanguageEnglish
Published Bristol IOP Publishing 16.12.2002
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Optical properties of specific thin films, surfaces, and low-dimensional structures
Physics
Raman spectra
Inorganic compounds
Semiconductor materials
Gallium nitrides
Photoluminescence
Line widths
Hall effect
VPE
Solid-solid interfaces
Cathodoluminescence
Experimental study
Carrier mobility
Carrier density
Aluminium oxides
Plasmon phonon interaction
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ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/14/48/386