Effects of Chemical Treatments and Ultrathin Al2O3 Deposition on InAlN Surface Investigated by X-ray Photoelectron Spectroscopy

The effects of chemical treatments and Al 2 O 3 deposition on the InAlN surface were investigated by X-ray photoelectron spectroscopy (XPS). Independent of the extent of native oxide removal, the In 4d core-level binding energy was the same for untreated, HCl-treated, and HF-treated InAlN. This indi...

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Published inJpn J Appl Phys Vol. 52; no. 8; pp. 08JN23 - 08JN23-3
Main Authors Akazawa, Masamichi, Nakano, Takuma
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2013
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Summary:The effects of chemical treatments and Al 2 O 3 deposition on the InAlN surface were investigated by X-ray photoelectron spectroscopy (XPS). Independent of the extent of native oxide removal, the In 4d core-level binding energy was the same for untreated, HCl-treated, and HF-treated InAlN. This indicated a strong pinning tendency of the Fermi level at the InAlN bare surface. However, a 300 meV decrease in the In 4d binding energy was observed after atomic layer deposition (ALD) of Al 2 O 3 , which indicated an increase in the negative surface potential at the InAlN surface. The reduction of positive charge at the InAlN surface is discussed.
Bibliography:(Color online) Summary of In 4d spectra observed for (a) untreated, (b) HCl-treated, (c) HF-treated, and (d) Al 2 O 3 (2 nm)-deposited InAlN surfaces. The broken line at 18.3 eV is a guide for the eyes. Schematic band diagram for obtained XPS results.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.08JN23