Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 34; no. 13; pp. 1943 - 1946
Main Authors Moran, M, Meidia, H, Fleischmann, T, Norris, D J, Rees, G J, Cullis, A G, Hopkinson, M
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 07.07.2001
Institute of Physics
Subjects
Composition; defects and impurities
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Quantum wells
Solid surfaces and solid-solid interfaces
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Temperature dependence
Gallium arsenides
Inorganic compounds
Semiconductor materials
Bound state
Segregation
Ternary compounds
Quantum wells
Photoluminescence
Binary compounds
Experimental study
Indium arsenides
Energy-level transitions
Excitons
Thermodynamic model
Chemical composition
Modelling
TEM
Concentration distribution
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ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/34/13/302