Charge compensating defects study of YbF3-doped BaF2 crystals using dielectric loss

YbF3‐doped BaF2 crystals with various concentrations of YbF3 (0.05, 0.1, 0.17, 0.2 mol%) have been grown using the conventional Bridgman method. Dielectric relaxation is used to study the charge compensating defects in BaF2 crystals with low YbF3 concentration. The optical absorption spectra reveal...

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Bibliographic Details
Published inphysica status solidi (b) Vol. 253; no. 2; pp. 397 - 403
Main Authors Nicoara, Irina, Stef, Marius
Format Journal Article
LanguageEnglish
Published Blackwell Publishing Ltd 01.02.2016
Subjects
BaF2
defects
dielectric relaxation
optical spectroscopy
ytterbium
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Summary:YbF3‐doped BaF2 crystals with various concentrations of YbF3 (0.05, 0.1, 0.17, 0.2 mol%) have been grown using the conventional Bridgman method. Dielectric relaxation is used to study the charge compensating defects in BaF2 crystals with low YbF3 concentration. The optical absorption spectra reveal the existence of both Yb2+ (in UV domain) and Yb3+ (in IR domain) ions. In the investigated temperature range (150–320 K) we have observed only one type of dielectric relaxation. This relaxation with activation energy E=0.54 eV is associated with trigonal‐type (C3v) centers. The charge compensating defects are discussed while taking also into account the optical absorption spectra and the calculated number of NNN dipoles whose relaxation is observed.
Bibliography:Romanian Ministry of Education and Research, grant ELICRYS, Contract no. 13/30.06.2014 in the frame of Capacities/RO-CERN (ELI-NP)
ArticleID:PSSB201552507
istex:E426B5C0BD6577D4D89AE4016421577750A64993
ark:/67375/WNG-1LCWQ8HR-P
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201552507