InP DHBT On-Wafer RF Characterization and Small-Signal Modelling up to 220 GHz

In this paper, we perform on-wafer characterization of an InP double heterojunction bipolar (InP DHBT) up to 220 GHz using conventional characterization and de-embedding methods. Transistor measurements are analyzed through a comparison with the small-signal model simulation. Transistor accesses are...

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Bibliographic Details
Published in2023 18th European Microwave Integrated Circuits Conference (EuMIC) pp. 101 - 104
Main Authors Davy, N., Deng, M., Nodjiadjim, V., Mukherjee, C., Riet, M., Mismer, C., Ardouin, B., Maneux, C.
Format Conference Proceeding
LanguageEnglish
Published European Microwave Association (EuMA) 18.09.2023
Subjects
Analytical models
Atmospheric measurements
Calibration
DH-HEMTs
Double heterojunction bipolar transistor (DHBT)
Indium Phosphide (InP)
InP/InGaAs
Microwave measurement
Microwave theory and techniques
Millimeter-wave
On-wafer characterization
Particle measurements
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Summary:In this paper, we perform on-wafer characterization of an InP double heterojunction bipolar (InP DHBT) up to 220 GHz using conventional characterization and de-embedding methods. Transistor measurements are analyzed through a comparison with the small-signal model simulation. Transistor accesses are modeled in order to understand how parasitic parameters are distributed and to propose subsequent improvements.
DOI:10.23919/EuMIC58042.2023.10288849