Hall and Field-Effect Mobilities of Electrons Accumulated at a Lattice-Matched ZnO/ScAlMgO4 Heterointerface

At a lattice‐matched ZnO/ScAlMgO4 heterointerface, Hall and field‐effect mobilities of grain‐boundary‐free ZnO channels have been simultaneously characterized under a gate electric field (EG) applied through a ScAlMgO4 dielectric gate. The field‐effect mobility increased linearly with increasing EG...

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Published inAdvanced materials (Weinheim) Vol. 16; no. 21; pp. 1887 - 1890
Main Authors Suzuki, T. I., Ohtomo, A., Tsukazaki, A., Sato, F., Nishii, J., Ohno, H., Kawasaki, M.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 04.11.2004
WILEY‐VCH Verlag
Subjects
Field-effect transistors
Zinc oxide
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Summary:At a lattice‐matched ZnO/ScAlMgO4 heterointerface, Hall and field‐effect mobilities of grain‐boundary‐free ZnO channels have been simultaneously characterized under a gate electric field (EG) applied through a ScAlMgO4 dielectric gate. The field‐effect mobility increased linearly with increasing EG (see Figure), clearly in contrast to the supralinear (exponential) dependence that has been previously reported for polycrystalline channels.
Bibliography:ArticleID:ADMA200401018
istex:42D74BA33E52E9476798F61B0D75A08408551194
ark:/67375/WNG-11G85K0G-2
This research was partially supported by a MEXT Grant of Creative Scientific Research (no. 14GS0204), a Grant-in-Aid for Young Scientists (no. 15685011), and the Nippon Sheet Glass Foundation for Materials Science and Engineering. AT is supported by a JSPS fellowship.
This research was partially supported by a MEXT Grant of Creative Scientific Research (no. 14GS0204), a Grant‐in‐Aid for Young Scientists (no. 15685011), and the Nippon Sheet Glass Foundation for Materials Science and Engineering. AT is supported by a JSPS fellowship.
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ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200401018