Hall and Field-Effect Mobilities of Electrons Accumulated at a Lattice-Matched ZnO/ScAlMgO4 Heterointerface
At a lattice‐matched ZnO/ScAlMgO4 heterointerface, Hall and field‐effect mobilities of grain‐boundary‐free ZnO channels have been simultaneously characterized under a gate electric field (EG) applied through a ScAlMgO4 dielectric gate. The field‐effect mobility increased linearly with increasing EG...
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Published in | Advanced materials (Weinheim) Vol. 16; no. 21; pp. 1887 - 1890 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
04.11.2004
WILEY‐VCH Verlag |
Subjects | |
Online Access | Get full text |
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Summary: | At a lattice‐matched ZnO/ScAlMgO4 heterointerface, Hall and field‐effect mobilities of grain‐boundary‐free ZnO channels have been simultaneously characterized under a gate electric field (EG) applied through a ScAlMgO4 dielectric gate. The field‐effect mobility increased linearly with increasing EG (see Figure), clearly in contrast to the supralinear (exponential) dependence that has been previously reported for polycrystalline channels. |
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Bibliography: | ArticleID:ADMA200401018 istex:42D74BA33E52E9476798F61B0D75A08408551194 ark:/67375/WNG-11G85K0G-2 This research was partially supported by a MEXT Grant of Creative Scientific Research (no. 14GS0204), a Grant-in-Aid for Young Scientists (no. 15685011), and the Nippon Sheet Glass Foundation for Materials Science and Engineering. AT is supported by a JSPS fellowship. This research was partially supported by a MEXT Grant of Creative Scientific Research (no. 14GS0204), a Grant‐in‐Aid for Young Scientists (no. 15685011), and the Nippon Sheet Glass Foundation for Materials Science and Engineering. AT is supported by a JSPS fellowship. ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.200401018 |