Use of EEPROM-based sensors in investigating physical mechanisms responsible for charging damage

• Published in: 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) pp. 346 - 353
• Main Author: Lukaszek, W.
• Format: Conference Proceeding
• Language: English
• Published: Piscataway NJ IEEE 2002
• Subjects: Applied sciences; Current density; Design. Technologies. Operation analysis. Testing; Dielectrics and electrical insulation; Electrodes; Electronics; Exact sciences and technology; Integrated circuits; Ion implantation; Microelectronic fabrication (materials and surfaces technology); Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensor phenomena and characterization; Surface charging; Testing, measurement, noise and reliability; Voltage; Performance evaluation; Waveform; Ion implantation; Voltage current curve; Electric charge; Measurement sensor; Experimental study; Physical properties; Processing equipment; Microelectronic fabrication; EEPROM memory; Experimental result; Ultraviolet detector; Gate oxide; Failure analysis; Integrated circuit; Current density; Wafer
• ISBN: 0780373529; 9780780373525
• DOI: 10.1109/RELPHY.2002.996658

Wafer charging damage in IC process equipment is the result of complex interactions between the wafer environment and the wafer. EEPROM-based sensors have been used recently to quantify the UV and charging characteristics of process tools, and to examine the interactions between the wafer environment and the wafer. This paper discusses these topics, relates them to charging damage, and illustrates them with examples from experiments performed in different process tools.