Comparison of two different methods to produce thin-window silicon drift detectors

• Published in: 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) pp. 1777 - 1782
• Main Authors: Rehak, P., Wei Chen, Carini, G.A., Hui-Fang Chuang, De Geronimo, G., Bin Dong, Gaskin, J.A., Keister, J., Zheng Li, Ramsey, B.D., Siddons, D.P.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.01.2009
• Subjects: Boron; Detectors; Implants; Ion implantation; Laboratories; Light sources; Probability distribution; Silicon compounds; Synchrotrons; Testing
• ISBN: 9781424439614; 1424439612
• ISSN: 1082-3654; 2577-0829
• DOI: 10.1109/NSSMIC.2009.5402203

We have developed a new method to produce thin-entrance-window Silicon Drift Detectors. To produce the desired thin-entrance-window a double implantation was used. This implantation consists of Boron ions (dose of 1×10 14 /cm 2 at 10 keV) plus a second implant of Phosphorus ions (with a dose of 4×1012/cm 2 at 50 keV or dose of 9×1011/cm 2 at 80 keV) through 500 ¿ of silicon dioxide. The second Phosphorus implantation compensates for the tail portion of the Boron ion implantation, so that the net Boron ion distribution will result in a thinner ¿dead¿ silicon layer and an elevated electric field near the silicon surface. We will compare test results from this newly developed thin-window with those from our previous development, where the thin junction was created using a single implantation of Boron ions (dose of 1×10 14 /cm 2 at 10 keV) through a 500 ¿ thick silicon dioxide. All testing was done in the U3C beam line at the National Synchrotron Light Source at Brookhaven National Laboratory.