Comparison of two different methods to produce thin-window silicon drift detectors
We have developed a new method to produce thin-entrance-window Silicon Drift Detectors. To produce the desired thin-entrance-window a double implantation was used. This implantation consists of Boron ions (dose of 1×10 14 /cm 2 at 10 keV) plus a second implant of Phosphorus ions (with a dose of 4×10...
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Published in | 2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC) pp. 1777 - 1782 |
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Main Authors | , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.01.2009
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Subjects | |
Online Access | Get full text |
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Summary: | We have developed a new method to produce thin-entrance-window Silicon Drift Detectors. To produce the desired thin-entrance-window a double implantation was used. This implantation consists of Boron ions (dose of 1×10 14 /cm 2 at 10 keV) plus a second implant of Phosphorus ions (with a dose of 4×1012/cm 2 at 50 keV or dose of 9×1011/cm 2 at 80 keV) through 500 ¿ of silicon dioxide. The second Phosphorus implantation compensates for the tail portion of the Boron ion implantation, so that the net Boron ion distribution will result in a thinner ¿dead¿ silicon layer and an elevated electric field near the silicon surface. We will compare test results from this newly developed thin-window with those from our previous development, where the thin junction was created using a single implantation of Boron ions (dose of 1×10 14 /cm 2 at 10 keV) through a 500 ¿ thick silicon dioxide. All testing was done in the U3C beam line at the National Synchrotron Light Source at Brookhaven National Laboratory. |
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ISBN: | 9781424439614 1424439612 |
ISSN: | 1082-3654 2577-0829 |
DOI: | 10.1109/NSSMIC.2009.5402203 |