Integration of III-V on Silicon Gain Devices at the Backside of Silicon-on-Insulator Wafers for Photonic Fully Integrated Circuits

We present a new platform integrating heterogeneous III-V/silicon gain devices at the backside of silicon-on-insulator wafers. The fabrication relies on commercial silicon photonic processes. The performances of lasers and SOAs fabricated accordingly are reported.

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Bibliographic Details
Published in2020 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Menezo, Sylvie, Thiessen, Torrey, Mak, Jason, Fonseca, Jeremy Da, Ribaud, Karen, Yong, Zheng, Jany, Christophe, Poon, Joyce K. S.
Format Conference Proceeding
LanguageEnglish
Published OSA 01.05.2020
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Summary:We present a new platform integrating heterogeneous III-V/silicon gain devices at the backside of silicon-on-insulator wafers. The fabrication relies on commercial silicon photonic processes. The performances of lasers and SOAs fabricated accordingly are reported.
DOI:10.1364/CLEO_SI.2020.SM4J.7