Integration of III-V on Silicon Gain Devices at the Backside of Silicon-on-Insulator Wafers for Photonic Fully Integrated Circuits
We present a new platform integrating heterogeneous III-V/silicon gain devices at the backside of silicon-on-insulator wafers. The fabrication relies on commercial silicon photonic processes. The performances of lasers and SOAs fabricated accordingly are reported.
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Published in | 2020 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
OSA
01.05.2020
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Subjects | |
Online Access | Get full text |
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Summary: | We present a new platform integrating heterogeneous III-V/silicon gain devices at the backside of silicon-on-insulator wafers. The fabrication relies on commercial silicon photonic processes. The performances of lasers and SOAs fabricated accordingly are reported. |
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DOI: | 10.1364/CLEO_SI.2020.SM4J.7 |