Heterogeneous Photodiodes on Silicon Nitride Waveguides with 20 GHz Bandwidth

We demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si 3 N 4 waveguides with 20 GHz bandwidth and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have 10 GHz bandwidth.

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Bibliographic Details
Published in2020 Optical Fiber Communications Conference and Exhibition (OFC) pp. 1 - 3
Main Authors Yu, Qianhuan, Gao, Junyi, Ye, Nan, Chen, Boheng, Sun, Keye, Xie, Linli, Srinivasan, Kartik, Zervas, Michael, Navickaite, Gabriele, Geiselmann, Michael, Beling, Andreas
Format Conference Proceeding
LanguageEnglish
Published OSA 01.03.2020
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Summary:We demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si 3 N 4 waveguides with 20 GHz bandwidth and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have 10 GHz bandwidth.
DOI:10.1364/OFC.2020.W4G.1