Heterogeneous Photodiodes on Silicon Nitride Waveguides with 20 GHz Bandwidth
We demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si 3 N 4 waveguides with 20 GHz bandwidth and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have 10 GHz bandwidth.
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Published in | 2020 Optical Fiber Communications Conference and Exhibition (OFC) pp. 1 - 3 |
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Main Authors | , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
OSA
01.03.2020
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Online Access | Get full text |
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Summary: | We demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si 3 N 4 waveguides with 20 GHz bandwidth and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have 10 GHz bandwidth. |
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DOI: | 10.1364/OFC.2020.W4G.1 |