Study of the effects of parasitic inductances and device capacitances on 1200 V, 35 A SiC MOSFET based voltage source inverter design

SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter can be lighter in weight, highly efficient, compact in size compared to Si IGBT based power converters. But the parasitic inductance in the power circuit will not allow S...

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Bibliographic Details
Published in2014 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES) pp. 1 - 6
Main Authors Nayak, Parthasarathy, Krishna, M. Vamshi, Vasudevakrishna, K., Hatua, Kamalesh
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2014
Subjects
Capacitance
Common mode noise
device characterization
double pulse test
EMI
Inductance
Logic gates
MOSFET
parasitic inductance
SiC MOSFET
Silicon
Silicon carbide
Switches
switching energy loss
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Summary:SiC MOSFET can switch five to ten times faster compared to state of the art Si IGBT. Due to that SiC MOSFET based power converter can be lighter in weight, highly efficient, compact in size compared to Si IGBT based power converters. But the parasitic inductance in the power circuit will not allow SiC MOSFET to switch to its full potential due to very high device voltage overshoot, sustained oscillation in line currents and device voltages, high EMI noise injected in the control circuit etc. Therefore it is very important to know the behavior of the switching characteristics of the device at different parasitic condition. In this paper switching behavior of a 1200V, 35 A, SiC MOSFET is tested extensively in different parasitic condition. A limiting value of these inductances is provided to build a voltage source inverter with SiC MOSFET utilizing its full switching potential.
ISBN:9781479963720
1479963720
DOI:10.1109/PEDES.2014.7042035