Silicon Waveguide Coupled III-V Nanowire Lasers with Epitaxial Gain Control

We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 pm

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Bibliographic Details
Published in2018 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Stettner, T., Kostenbader, T., Ruhstorfer, D., Bissinger, J., Thurn, A., Riedl, H., Kaniber, M., Koblmuller, G., Finley, J. J.
Format Conference Proceeding
LanguageEnglish
Published OSA 01.05.2018
Subjects
Couplings
Laser excitation
Laser modes
Optical waveguides
Silicon
Waveguide lasers
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Summary:We demonstrate lasing from individual GaAs-based NWs integrated onto Si ridge waveguides. In addition, proof-of-principle coupling emission to the Si WG is shown, with propagation distances of the lasing mode exceeding > 60 pm
DOI:10.1364/CLEO_SI.2018.SW3B.6