Nanoscale polymer electrolytes: Fabrication and applications using nanowire transistors

We present a method to pattern the poly(ethylene oxide)/LiClO 4 polymer electrolyte on the nm-scale by electron beam lithography. We use the patterned polymer electrolyte as a high capacitance gate dielectric for InAs nanowire transistors in a `wrap-gate' geometry. Patterning enabled multiple i...

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Bibliographic Details
Published in2014 Conference on Optoelectronic and Microelectronic Materials & Devices pp. 286 - 289
Main Authors Carrad, Damon J., Burke, Adam M., Svensson, Sofia Fahlvik, Lyttleton, Roman W., Joyce, Hannah J., Hark Hoe Tan, Jagadish, Chennupati, Storm, Kristian, Samuelson, Lars, Linke, Heiner, Micolich, Adam P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2014
Subjects
Electric potential
electron beam lithography
III-V nanowires
Logic gates
Nanoscale devices
polymer electrolytes
Polymers
Quantum dots
quantum transport
Temperature measurement
Transistors
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Summary:We present a method to pattern the poly(ethylene oxide)/LiClO 4 polymer electrolyte on the nm-scale by electron beam lithography. We use the patterned polymer electrolyte as a high capacitance gate dielectric for InAs nanowire transistors in a `wrap-gate' geometry. Patterning enabled multiple independently controllable gates on the same device, which exhibit stability and subthreshold characteristics comparable to conventional metal/oxide wrap-gates at room temperature. The strong tuning at room temperature combined with the `freeze-out' of Li + /ClO 4 - transport for T <; 220 K allows a wide range of charge environments to be set and held for quantum transport measurements. The simplicity of fabrication and excellent gate characteristics broadens the scope for polymer electrolyte gating in studies of nanowires and other nanoscale devices.
ISBN:9781479968671
1479968676
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2014.7038713