Positioning of the active region in broad-waveguide laser for optimized hole injection

The active region position in broad-waveguide lasers can significantly influence the performance of the device due to significant differences in mobility between electrons and holes. An increase in output power by 25% was observed in lasers with the active region positioned close to the p-cladding l...

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Bibliographic Details
Published in2014 Conference on Optoelectronic and Microelectronic Materials & Devices pp. 41 - 43
Main Authors Lysevych, M., Tan, H. H., Karouta, F., Jagadish, C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2014
Subjects
Diode Lasers
Educational institutions
Lasers
Optical device fabrication
Optical waveguides
Performance evaluation
Quantum well lasers
Semiconductor Lasers
Waveguide lasers
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Summary:The active region position in broad-waveguide lasers can significantly influence the performance of the device due to significant differences in mobility between electrons and holes. An increase in output power by 25% was observed in lasers with the active region positioned close to the p-cladding layer.
ISBN:9781479968671
1479968676
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2014.7038647