Engineering Atomic Defects in Hexagonal Boron Nitride via Resonant Optical Excitation of Phonons

We introduce an approach to engineer defects in hBN using intense pulses resonant with phonons at 7.3 μm. Such defects are highly subwavelength < 30 nm) with an alignment sensitive to the polarization.

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Bibliographic Details
Published in2020 Conference on Lasers and Electro-Optics (CLEO) pp. 1 - 2
Main Authors Jadidi, M. Mehdi, Chen, Cecilia Y., Li, Baichang, Ginsberg, Jared S., Chae, Sang Hoon, Joshi, Chaitali, Patwardhan, Gauri, Watanabe, Kenji, Taniguchi, Takashi, Hone, James, Gaeta, Alexander L.
Format Conference Proceeding
LanguageEnglish
Published OSA 01.05.2020
Subjects
Atom optics
Optical polarization
Optical pulses
Optical pumping
Phonons
Ultrafast optics
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Summary:We introduce an approach to engineer defects in hBN using intense pulses resonant with phonons at 7.3 μm. Such defects are highly subwavelength < 30 nm) with an alignment sensitive to the polarization.
DOI:10.1364/CLEO_QELS.2020.FF2Q.6