Structural evolution and electronic properties of n-type doped hydrogenated amorphous silicon thin films

The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy a...

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Bibliographic Details
Published in2011 Asia Communications and Photonics Conference and Exhibition (ACP) pp. 1 - 10
Main Authors Jian He, Wei Li, Rui Xu, Kang-Cheng Qi, Ya-Dong Jiang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2011
Subjects
a-Si:H
Abstracts
ESR
FTIR
Heating
PECVD
Raman
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Summary:The relationship between structure and electronic properties of n-type doped hydrogenated amorphous silicon (a-Si:H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si:H thin films. Results reveal that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.
ISBN:9780819489616
0819489611
ISSN:2162-108X
2162-1098
DOI:10.1117/12.903747